发明名称 |
Circuit device and corresponding method for programming a nonvolatile memory cell having a single voltage supply |
摘要 |
A circuit device programs non-volatile memory cells having a single voltage supply, wherein each cell comprises a floating gate transistor having source and drain terminals and a control gate terminal, with the drain terminal being supplied a program voltage from a voltage booster circuit. The device includes a means of supplying a constant drain current to the drain terminal of the memory cell; an element for sampling the drain current drawn through the cell; and a means of voltage feedback driving the control gate terminal of the cell according to the sampled value of the drain current.
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申请公布号 |
US6111791(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19990322644 |
申请日期 |
1999.05.28 |
申请人 |
STMICROELECTRONICS, S.R.L. |
发明人 |
GHILARDELLI, ANDREA |
分类号 |
G11C5/14;G11C16/12;(IPC1-7):G11C16/04;G11C16/06 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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