| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor substrate for analysis that can prevent the segregation of a metal element, can accurately and uniformly connect the metal element with a specific density onto a surface, and can improve the control property of the density of the metal element. SOLUTION: In a method for forming a semiconductor substrate for analysis (standard semiconductor wafer for analysis), an Si-OH group is formed by hydrophilic treatment on the surface of a silicon substrate. Then, the termination of an OH group on the silicon substrate surface is allowed to react to silazane with a hydrocarbon group containing the metal element, and an organic molecule layer containing the metal element is formed on the silicon substrate surface. The metal element includes Na, Al, Pb, Sn, B, Ti, Mo, W, or the like. The density of the metal element being connected to the silicon substrate surface of the organic molecule layer is adjusted by changing the mixing ratio between silazane having the hydrocarbon group containing the metal element and that with the hydrocarbon group without containing the metal element.
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