METHOD FOR FABRICATING TRANSISTOR WITH IMPROVED HOT CARRIER DEGRADATION

摘要

PURPOSE: A method for fabricating a transistor is provided which reduces the hot carrier degradation. CONSTITUTION: A method for fabricating a transistor reducing hot carrier degradation is provided. An active device region(18) is formed on a silicon substrate. A gate conductor region(20) is formed and has gate side walls, and is separated by a gate oxide layer on a channel region defined within source and drain regions. A lightly doped drain structure and a gate side wall spacer are formed. The drain region is annealed at an interface located between the lightly doped drain structure and the gate oxide in the drain region with an amount sufficient to combine nitrogen with silicon in an atmosphere having at least one of NO, NH3 or N2O.