METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, NON VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to eliminate a variation of a width of buried diffusion layers adjacent to an end part opposite to a lower floating gate, in which the variation of a width is caused by a misalignment generated by an optical aligning apparatus. CONSTITUTION: A method for manufacturing a semiconductor device having a diffusion layer adjacent to a gate electrode and an end part opposite to the gate electrode, comprises the steps of: forming a conductive layer on a semiconductor substrate through an insulation layer; patterning the conductive layer to form a shielding electrode and the gate electrode, in which the shielding electrode is adjacent to respective opposite end parts to the gate electrode, extended in parallel with the gate electrode; injecting impurities into the semiconductor substrate with a self-alignment method using the gate electrode and the shielding electrode as a mask to form the diffusion layer covering adjacent cells among transistor cells; and insulating the gate electrode in the respective transistor cells.