| 摘要 |
PURPOSE: A semiconductor apparatus is to provide a capacitor dielectric of a low leakage current by using a metal of a conductive layer to avoid a deoxidization of the dielectric. CONSTITUTION: A semiconductor apparatus comprises a semiconductor substrate(10), a tantalum oxide layer, an oxide metal layer, and a nitric metal layer(19). The tantalum oxide layer is adjacent to the semiconductor substrate. The oxide metal layer is formed on the tantalum oxide layer opposite to the semiconductor substrate, substantially avoiding a deoxidization of the tantalum oxide layer by the metal of the nitride metal layer. The nitric metal layer is formed on the oxide metal layer opposite to the tantalum oxide layer, including a metal capable of deoxidizing the tantalum oxide layer.
|
