SRAM CELL AND FABRICATION METHOD THEREOF

摘要

PURPOSE: An SRAM cell and fabrication method thereof are provided which has a high integration density and has a load transistor having a high mobility and a large driving current at a low driving voltage. CONSTITUTION: An SRAM cell includes: at least two driving transistors; at least two transfer transistors; at least two load transistors each of which is constituted with a TFT(Thin Film Transistor) and is arranged on the driving and transfer transistor through a layer insulation film(10) and comprises an active region(5) including a Si film(4a) having an improved crystalline property of an amorphous Si(4) by a solid state growth method using a catalyst element; and a barrier layer(3) which is located between the layer insulation film and the load transistor and prevents the catalyst element from being diffused to the driving transistor and to the transfer transistor.