A semiconductor sensor with epi-pocket isolation is described. In one embodiment, the semiconductor sensor comprises a deformable member which includes a first silicon region of a first conductivity type and a second silicon region of a second conductivity type surrounding the first silicon region. The semiconductor sensor further comprises a stress-sensitive diffused resistive element disposed on the deformable member in the first silicon region.
申请公布号
WO0012988(A9)
申请公布日期
2000.08.24
申请号
WO1999US17189
申请日期
1999.07.29
申请人
MAXIM INTEGRATED PRODUCTS, INC.
发明人
BRYZEK, JANUSZ;BURNS, DAVID, W.;NASIRI, STEVEN, S.