| 摘要 |
Insulated gate bipolar transistor (IGBT) with pn-electric insulation of adjacent components includes a weakly doped drift- zone (2) of a first-conductivity type provided in a weakly doped semiconductor substrate (1) of the first conductivity type. A first strongly doped trough zone (8) of the first conductivity type and a second strongly doped trough zone (9) of a second conductivity type, opposite to the first type, are arranged one after the other between the drift zone (2) and the semiconductor substrate (1). An IGBT-cell (3) with a cathode (4,5;k) and an anode (6;A) arranged spaced around the IGBT-cell (3) at the edge of the drift zone (2), are provided in the drift zone (2). The two trough zones (8,9) are inter-joined on their surface by a short-circuit stirrup (10).
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