发明名称 |
Process for producing barrier film |
摘要 |
A thin nitride film having a low resistance is formed at a low film-forming temperature. In the step of forming a thin nitride film 24 of a high temperature-melting point metal by introducing a feedstock gas having the high temperature-melting point metal and a reductive nitrogen-containing gas having a nitrogen atom into a vacuum atmosphere, an auxiliary reductive gas free from nitrogen is also introduced. The high temperature-melting point metal deposited due to the auxiliary reductive gas compensates for the deficiency of the high temperature-melting point metal of the deposited nitride and thus enable the growth of the thin nitride film 24 having a low resistance. <IMAGE> |
申请公布号 |
EP1029943(A1) |
申请公布日期 |
2000.08.23 |
申请号 |
EP20000103073 |
申请日期 |
2000.02.15 |
申请人 |
NIHON SHINKU GIJUTSU KABUSHIKI KAISHA |
发明人 |
HARADA, MASAMICHI |
分类号 |
C23C16/34;H01L21/285;H01L21/768 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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