Flash EEPROM

摘要

An EEPROM cell includes a dual-gate transistor having a floating gate for storing the data and a select gate to access the cell, the two gates each being formed from poly sidewalls and being separated by a thin vertical oxide member that is formed by growing oxide on the vertical poly sidewalls of an aperture in which the select gate is formed, so that the final structure has dimensions that are less than those obtainable with optical lithography because both gates are sidewalls and therefore not limited to the dimensions achievable with optical lithography.