发明名称 Fast redundancy scheme for high density, high speed memories
摘要 A high speed process for determining whether an externally applied address points to a memory cell or a redundant memory cell in a memory is disclosed. Identification information associated with redundant memory rows and columns is stored and compared with decoded information based upon a decoded externally applied address. This comparison determines if a memory cell of a redundant memory cell is addressed.
申请公布号 US6108250(A) 申请公布日期 2000.08.22
申请号 US19990293494 申请日期 1999.04.15
申请人 ALLIANCE SEMICONDUCTOR CORPORATION 发明人 KENGERI, SUBRAMANI
分类号 G11C29/00;(IPC1-7):G11C7/00 主分类号 G11C29/00
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