发明名称 |
Fast redundancy scheme for high density, high speed memories |
摘要 |
A high speed process for determining whether an externally applied address points to a memory cell or a redundant memory cell in a memory is disclosed. Identification information associated with redundant memory rows and columns is stored and compared with decoded information based upon a decoded externally applied address. This comparison determines if a memory cell of a redundant memory cell is addressed.
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申请公布号 |
US6108250(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19990293494 |
申请日期 |
1999.04.15 |
申请人 |
ALLIANCE SEMICONDUCTOR CORPORATION |
发明人 |
KENGERI, SUBRAMANI |
分类号 |
G11C29/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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