发明名称 |
Method for fabricating a semiconductor device |
摘要 |
A method for fabricating a semiconductor device having LDD structure. The method includes: a first step for forming an electrically insulating layer on an active area defined on a surface of a semiconductor substrate; a second step for forming a conductive layer on said insulating layer; a third step for forming a patterned photoresist layer of a downward tapered shape on said conductive layer; a fourth step for forming a gate electrode by patterning said conductive layer using a mask provided by bottom portions of said patterned photoresist layer; a fifth step for forming heavilyly doped regions at both sides of said gate electrode by introducing ions using a mask provided by top portions of said patterned photoresist layer; a sixth step for removing said patterned photoresist layer; and a seventh step for forming lightly doped regions at both sides of said gate electrode by introducing ions using a mask provided by said gate electrode.
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申请公布号 |
US6107148(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19980178510 |
申请日期 |
1998.10.26 |
申请人 |
NIPPON STEEL SEMICONDUCTOR CORPORATION |
发明人 |
TAKI, MASUSHI |
分类号 |
H01L21/266;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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