BARE IC CHIP AND SEMICONDUCTOR DEVICE MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a bare IC chip and a semiconductor device manufacturing method which can improve reliability of electric continuity of a bare IC chip and a substrate, when the bare IC chip is flip chip mounted on the substrate via anisotropic conductive bonding material. SOLUTION: In a bare IC chip 1, nickel layers (conducting metal layers) 1D harder than gold bumps 1C are formed on the surfaces of gold bumps 1C, 1C... in an active surface 1Aa. This semiconductor device manufacturing method contains a supply process supplying anisotropic conductive bonding material to specified parts of a substrate 2, an inspection process measuring surface hardness of the nickel layers (conducting metal layers) 1D formed on the metal bumps 1C of the bare IC chip 1, and a connection process in which the are IC chip 1 is mounted on a substrate coated with the anisotropic conductive bonding material after the supply process and the inspection process, and the bare IC chip 1 is thermally compression-bonded to the substrate 2 via the anisotropic conductive bonding material 3.