| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for manufacturing a joint integrated circuit device on a semiconductor wafer substrate. SOLUTION: In a process for manufacturing joint integrated circuit device, a gate oxide 530, a first transistor having a first gate 540, and a second transistor having a second gate 500 are successively formed on a semiconductor wafer substrate 510. The first transistor is optimized to a first operating voltage by changing the physical characteristics of the first gate 540, a first tab doping profile, or a first source/drain doping profile. The second transistor is optimized to a second operating voltage by changing the physical characteristics of the second gate 550 or the second source/drain doping profile of the second transistor. The operating voltages of the transistors are optimized to prescribed values by combinedly or independently changing the physical characteristics of the gates 540 and 550.
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