发明名称 |
Method of creating low resistance contacts in high aspect ratio openings by resputtering |
摘要 |
A method of producing a low resistance contact in an opening carried in a substrate is comprised of the steps of forming a first layer of conductive material along a portion of the walls of the opening. A portion of the conductive material is resputtered from the walls of the opening to form a thin layer at the bottom of the opening. A second layer of conductive material is deposited on the substrate in a manner to fill the opening. A contact thus formed is also disclosed.
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申请公布号 |
US6106677(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19980056211 |
申请日期 |
1998.04.07 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU, GURTEJ S. |
分类号 |
C23C14/04;C23C16/04;H01L21/768;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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