| 摘要 |
PROBLEM TO BE SOLVED: To reduce the energy loss of a conductive wiring and to contrive to raise the characteristics of an on-chip inductor in a semiconductor device. SOLUTION: A p-type silicon substrate 1 is prepared as a support substrate and a heat treatment is performed on the substrate 1, whereby heat donors are generated in the substrate 1, acceptors in the substrate 1 are compensated by the donors and a carrier concentration in the substrate 1 is reduced to a low concentration. When the donors are generated in the substrate 1 by performing the heat treatment on the substrate 1 in such a way, the donors compensate with the acceptors in the substrate 1 to each other. Therefore, the carrier concentration in the substrate 1 is apparently changed into the low concentration and the substrate 1 can be increased in resistance. As a result, the energy loss of a conductive wiring can be reduced and the enhancement of the characteristics of an on-chip inductor can be contrived in a semiconductor device.
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