CHARGED PARTICLE RAY EXPOSURE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device, comprising the steps of radiating a mask (3) by an illumination optical system, passing electron beams through a pattern on the mask to form an image on a wafer (4) through two lenses (1, 2), reduction-transferring the pattern on the mask (3) onto the wafer (4), and setting at least one of deflectors (C1 to C8) and (P1 to P4) forming a deflecting system (7) so that the expected half size of a deflecting coil and an Ampere Turn value are roughly zero in 3 theta , 5 theta , and 7 theta components of a magnetic field generated by the deflection, whereby a quadruple aberration occurring in the deflection (7) can be reduced.