| 摘要 |
Electrical connection pads (3) for integrated semiconductor circuits have a protective diode formed by a doped region (13) located in a well (55) of opposite doping and another protective diode formed by well (59) which surrounds another doped region (15) of the same doping type as a contact are a and is surrounded by another well (57) of oppositive doping. The doped regio ns are connected to the pad and are continuous, narrow strips extending at or along a portion of the peripheriy of the pad. Also the well for which the other doped region serves as a contact has s strip-shape and is located at t he periphery of the pad. The other (15) doped region is also used as a contact for forming an electrical resistor connected to an input/output path of the integrated circuit, the resistor being formed in the well (59) surrounding t he other doped region and another contact of the resistor being formed by a further doped region (45) of the same doping type, also having a strip-shape and located in the same well, thus at the periphery ofthe pad and beneath a marginal portion of the pad. The resistor will thereby not require any extra space. |
