| 摘要 |
<p>A semiconductor pressure sensor comprising a silicon substrate (10) having a diaphragm strained according to a pressure applied, strain gauges (5a, 5b, 5c, 5d) provided on the diaphragm (10) and made of a diffused resistor and a P-N junction region disposed in the vicinity of the diffused resistor and reversely biased.</p> |
