INFRARED RAY SENSING UNIT AND FABRICATION METHOD THEREOF

摘要

PURPOSE: An infrared ray sensing unit and fabrication method thereof is to block heat transferred into a substrate from infrared ray devices, thereby enhancing a sensing capability of the infrared ray. CONSTITUTION: An infrared ray sensing unit comprises: a semiconductor substrate(101) having plural etched portions of a predetermined depth formed at one side thereof; an infrared ray sensing device disposed separately from the semiconductor substrate at the etched portions; a metal electrode(104) formed on the entire surface of the other side of the semiconductor substrate; and a heat blocking layer(102) disposed between the semiconductor substrate and the infrared ray sensing device. The infrared ray sensing device comprises: a lower electrode(106) formed on the heat blocking layer; an infrared sensing film(107) formed on the lower electrode; an insulating layer(108) formed on an external wall of the infrared ray sensing film; an upper electrode(110) disposed on the infrared ray sensing film; and an infrared ray absorbing film(111) disposed on the upper electrode.