| 摘要 |
PURPOSE: A method is provided for detecting a deviation of mask alignment in continuous semiconductor manufacturing process using various masks. CONSTITUTION: A first conductive pattern is formed on a conductive layer of semiconductor substrate with a second mask by photo etching process, and forming a second conductive pattern with same process in next. Central taps(40,45) are placed between taps(30,35) of a bridge pattern(P) at which a width(W3) of a first conductive pattern is reduced to a width(W4) of a second one by etching process. A bridge pattern is symmetric against to a junction point of a horizontal line connecting to taps(30,35) and a vertical line connecting to taps(40,45). In a case, an equation of V/I=(R1-R2)/2=(delta W)/2 is achieved, w here R1 is a resistance between taps(30,40), R2 is a resistance between taps((40,35), and delta W is a deviation of conductive pattern width, so a variation of conductive pattern width(delta W) corresponding an overlay ratio of mask pattern can be calculated by measuring a variation(delta R) of conductive pattern resistance.
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