| 摘要 |
PURPOSE: A method for manufacturing a polycrystalline silicon thin film using a high density plasma is provided to make the polycrystalline silicon thin film having a high crystallization degree, a high uniformity and a rapid evaporation speed. CONSTITUTION: In a plasma chemical vapor deposition method using a mixture gas of SiHxCly(more specifically, SiH2Cl2,SiHCl3 and SiCl4 where x means an integer of 0-3, y means an integer of 1-4), H2 and He, an evaporation temperature is from 450°C to 600°C. An inductively coupled plasma method is used to form plasma.
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