METHOD FOR FABRICATING ACTIVE MATRIX SUBSTRATE AND GATE FABRICATED BY THE SAME

摘要

PURPOSE: A method for fabricating an active matrix substrate and a gate fabricated by the same are provided to, normally, acquire a TFT/IC pad structure and, simultaneously, reduce a required mask sheet adequately, thereby increasing the productive efficiency of goods. CONSTITUTION: A procedure of forming a TFT(100) is changed from a gate electrode layer(10)-a gate insulating layer(11)-an active layer-an ohmic contact layer-source/drain electrode layers(13)-a passivation layer-a pixel electrode layer(12) into the gate electrode layer-the gate insulating layer-the pixel electrode layer-the source/drain electrode layer-the active layer-passivation layer. In this case, a gate IC pad(500) connecting to a gate IC is composed of a gate metal. After the gate insulating layer is formed, the gate insulating layer corresponding to the gate IC pad is patterned. In this case, the gate IC pad has a dual structure such as a gate electrode layer/a pixel electrode layer.