发明名称 LASER DIODE
摘要 PURPOSE: A laser diode is provided to improve the characteristics of elements by freeing the laser from the scope of multi quantum well and enable users to use laser in a high strain. CONSTITUTION: A laser diode includes the following components. A substrate(31) functions as a basic part of a laser diode. A primary clad layer(32) is formed right on top of a substrate(31). A primary revitalization layer(33a) is formed on top of a primary clad layer(32). A secondary revitalization layer(33b) is formed by a big strain of a third revitalization layer(33c). A secondary clad layer(34) is formed right on top of the secondary revitalization layer(33b). A series of electrodes are formed right under the substrate(31) and right on top of the secondary clad layer(34). A laser diode forms a very thin quantum well with bigger strains than the limit strains of multi quantum well and places the strains to the center of the single quantum well or the multi quantum well. The device enables users to enhance laser capabilities by inducing electrons and halls to be focused to the central quantum well.
申请公布号 KR20000051759(A) 申请公布日期 2000.08.16
申请号 KR19990002370 申请日期 1999.01.26
申请人 LG ELECTRONICS INC. 发明人 YOON, SUNG JU
分类号 H01S3/14;(IPC1-7):H01S3/14 主分类号 H01S3/14
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