Superluminescent edge emitting device

摘要

A superluminescent edge emitting device is fabricated to have apparent vertical light emission. The superluminescent device is comprised of a semiconductor supporting structure (10) having a major surface (11). A light emitting portion (60) is formed above a first portion of the major surface (11), wherein the light emitting portion (60) is configured in a substantially circular shape to suppress lasing and has sidewalls (61), and wherein light (75) is emitted from the sidewalls (61) of the light emitting portion (60). An non-emitting portion (62) is formed above a second portion of the major surface (11) and adjacent to the light emitting portion (60), wherein the non-emitting portion (62) has sidewalls (63), and wherein the sidewalls (61) of the light emitting portion (60) and the sidewalls (63) of the non-emitting portion (62) are configured to direct the light (75) emitted from the light emitting portion (60) substantially perpendicular to the major surface (11).