发明名称 |
CAPACITOR OF SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A capacitor of semiconductor apparatus is to increase an effective area of the capacitor while maintaining a specific dielectric constant of a dielectric layer. CONSTITUTION: A semiconductor apparatus capacitor comprises a silicon substrate(20) as a first conductive semiconductor substrate; an impurity region(21) formed on the substrate; an interlayer dielectric(22) formed on the substrate and having a contact for exposing the impurity region; a tungsten plug(23) as a conductive plug burying the contact; a first and second storage electrode(24,25) consisting of a semi-sphere protrusion with irregular shape, formed on the insulation layer, and contacting the plug; a third storage electrode(26) consisting of a tungsten layer covering the second storage electrode; a dielectric layer(27) formed on a surface of the tungsten layer; and an upper electrode formed on the dielectric layer.
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申请公布号 |
KR20000052058(A) |
申请公布日期 |
2000.08.16 |
申请号 |
KR19990002875 |
申请日期 |
1999.01.29 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
CHO, BOK WON |
分类号 |
H01L27/108;H01L21/02;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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