发明名称 CAPACITOR OF SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A capacitor of semiconductor apparatus is to increase an effective area of the capacitor while maintaining a specific dielectric constant of a dielectric layer. CONSTITUTION: A semiconductor apparatus capacitor comprises a silicon substrate(20) as a first conductive semiconductor substrate; an impurity region(21) formed on the substrate; an interlayer dielectric(22) formed on the substrate and having a contact for exposing the impurity region; a tungsten plug(23) as a conductive plug burying the contact; a first and second storage electrode(24,25) consisting of a semi-sphere protrusion with irregular shape, formed on the insulation layer, and contacting the plug; a third storage electrode(26) consisting of a tungsten layer covering the second storage electrode; a dielectric layer(27) formed on a surface of the tungsten layer; and an upper electrode formed on the dielectric layer.
申请公布号 KR20000052058(A) 申请公布日期 2000.08.16
申请号 KR19990002875 申请日期 1999.01.29
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 CHO, BOK WON
分类号 H01L27/108;H01L21/02;(IPC1-7):H01L27/108 主分类号 H01L27/108
代理机构 代理人
主权项
地址
您可能感兴趣的专利