| 摘要 |
An an infrared laser structure has an inverted or p-side down orientation. The infrared laser structure is inverted and wafer fused to a blue laser structure to form an infrared/blue monolithic laser structure. The top semiconductor layer of the inverted infrared stack laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.
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