| 摘要 |
A semiconductor TE/TM mode converter comprises a semiconductor waveguide layer including a compressive-strained first region and a tensile-strained second region, and a diffraction grating formed on the first region. The first region and second region are reversed-biased and forward-biased, respectively. TE mode light incident on the facet of the first region generates TM mode light outgoing from the facet of the second region. The diffraction grating in the first region has selective reflectance against TM mode light and reflects the TM mode light toward the second region, to lower the lasing threshold of TM mode light and raise the conversion efficiency.
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