| 摘要 |
PROBLEM TO BE SOLVED: To be able to measure a circuit performance in a wafer state before cleavage by forming a window for light at an upper electrode or a peripheral part of a light receiving layer of an edge input photo receiving element. SOLUTION: An n-InP layer 207, an n-InGaAsP layer 206, an InGaAs light receiving layer 205, a p-InGaAs layer 204, a p-InP layer 203 and a P+-InGAsP layer 202 are orderly laminated on a semi-insulating InP substrate 210 and a light incidence surface 201 to which an incidence is made in the parallel direction corresponding to the structure is formed. In this case a p electrode 208 which locates on the upper layer of the light receiving layer 205 of the laminated structure is made annularly formed at the peripheral part, and an internal part of the ring shape p electrode 208 is used for a light window for checking the light 213 from above.
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