| 摘要 |
PROBLEM TO BE SOLVED: To substantially increase a degree of integration while including an element which needs to be protected from surge and a surge protective circuit. SOLUTION: A slave chip 21 is joined to the surface 11 of a master chip 1 to build up a semiconductor device of a chip-on-chip structure. NPN transistors Q1-Q4 for forming a driving circuit for driving an inductive load L are formed on the master chip 1, and diodes D1-D4 for protecting the NPN transistors Q1-Q4 from surge are formed on the slave chip 2. |
