| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an electric-charge transfer element to assure an electric-charge transfer efficiency without depending on the interval between a lower-layer transfer electrode and upper-layer transfer electrode. SOLUTION: Lower-layer transfer electrodes 3 are arrayed on a substrate 1, which are covered with an insulating film 4, then an impurity is introduced into the front surface of the substrate 1 by ion implantation wherein the ion beam B is inclined by a specified incident angleθ, and then an upper-layer transfer electrode 6 is formed between the lower-layer transfer electrodes 3 on the substrate 1. Here, an incident directionα0 of ion beam to the lower-layer transfer electrode 3 is so selected that no potential dip (b) is formed on such a surface layer of the substrate 1 as from below the lower-layer transfer electrode 3 to below the upper-layer transfer electrode, and at ion implantation, the ion beam B is projected to the substrate 1 in the selected incident directionα0.
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