发明名称 Design for a semiconductor device having elements isolated by insulating regions
摘要 A semiconductor device including a semiconductor substrate having a main surface. An insulating film is formed on the main surface of the semiconductor substrate. A semiconductor layer is placed on the insulating film. Side insulating regions extending from a surface of the semiconductor layer to the insulating film divide the semiconductor layer into element regions. The element regions are isolated from each other by the side insulating regions and the insulating film. The semiconductor substrate has a resistivity of 1.5 OMEGA cm or lower. A voltage at the semiconductor substrate is set to a given voltage.
申请公布号 US6104078(A) 申请公布日期 2000.08.15
申请号 US19970941756 申请日期 1997.09.30
申请人 DENSO CORPORATION 发明人 IIDA, MAKIO;SAITOU, MITSUHIRO;MURATA, AKITAKA;BAN, HIROYUKI;SUZUKI, TADASHI;SAKAKIBARA, TOSHIO;SUGISAKA, TAKAYUKI;MIURA, SHOJI
分类号 H01L21/762;(IPC1-7):H01L29/36 主分类号 H01L21/762
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