发明名称 |
Semiconductor element and semiconductor memory device using the same |
摘要 |
A field-effect semiconductor element implemented with a reduced number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature. In accordance with one embodiment, a carrier confinement region, isolated from a channel and a gate of the semiconductor FET element, is provided to operate as a storage node for trapping the carrier or carriers.
|
申请公布号 |
US6104056(A) |
申请公布日期 |
2000.08.15 |
申请号 |
US19980126437 |
申请日期 |
1998.07.30 |
申请人 |
HITACHI, LTD.;HITACHI DEVICE ENGINEERING CO., LTD. |
发明人 |
YANO, KAZUO;ISHII, TOMOYUKI;HASHIMOTO, TAKASHI;SEKI, KOICHI;AOKI, MASAKAZU;SAKATA, TAKESHI;NAKAGOME, YOSHINOBU;TAKEUCHI, KAN |
分类号 |
H01L21/8247;G11C11/22;G11C11/404;G11C16/02;G11C16/04;G11C16/28;H01L21/28;H01L21/336;H01L27/01;H01L27/115;H01L29/423;H01L29/51;H01L29/66;H01L29/76;H01L29/788;H01L29/792;H01L29/94;H01L31/036;H01L31/062;H01L31/112;H01L31/113;(IPC1-7):H01L29/76;H01L21/119 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|