| 摘要 |
PURPOSE:To obtain a rectifying semiconductor device having a high efficiency and a high speed by holding an electron potential in the reverse characteristic high without increasing a channel series resistance of forward characteristics and eliminating voltage dependency of a reverse leakage current. CONSTITUTION:A Schottky contact surface (e) is formed on the upper surface of a protrusion on the surface of a one conductivity type semiconductor formed with trench grooves 8, an opposite conductivity type semiconductor 5 is formed in the bottom of the groove, and an insulator layer is formed on the sidewall of a protrusion. The semiconductor 5 and a Schottky contact metal layer are electrically connected to the same potential, and so constituted that at least two depleted layers 12, 13 at the time of zero voltage bias are not connected. |
