发明名称 METHOD AND APPARATUS FOR SUBSTRATE HEAT-TREATMENT
摘要 PROBLEM TO BE SOLVED: To reduce a power for exhaust, which is required for a heat treatment of a substrate. SOLUTION: While a heat treatment is being performed on a substrate in a treating chamber, exhaust in the chamber in the initial first stage SP in the heat treatment is conducted in a first exhaust quantity (maximum exhaust quantity EL) and in succeeding stages from after the lapse of the first stage SP, the exhaust is conducted in such a way that the first exhaust quantity is changed into an exhaust quantity (second exhaust quantity E2) smaller than the first exhaust quantity E1 and the exhaust quantity in the chamber is changed, so that a necessary exhaust quantity can be ensured according to the necessary exhaust quantity to vary during the heat treatment.
申请公布号 JP2000223387(A) 申请公布日期 2000.08.11
申请号 JP19990019667 申请日期 1999.01.28
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 OTANI MASAMI
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址