发明名称 |
SEMICONDUCTOR MEMORY AND METHOD OF IMPROVING YIELD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To increase yield of chips while preventing signal contention of a sense amplifier using a high replacement flexibility redundancy and method. SOLUTION: Redundancy elements are integrated in at least two memory arrays which don't share the sense amplifiers. A defective row/column line in a first array or block is replaced with a redundant row/column line from its own redundancy. A corresponding row/column line whether defective or not is replaced in a second array or block which does not share sense amplifiers with the first block. The corresponding row/column line is replaced to mimic the redundancy replacement of the first block. |
申请公布号 |
JP2000222898(A) |
申请公布日期 |
2000.08.11 |
申请号 |
JP19990365136 |
申请日期 |
1999.12.22 |
申请人 |
INFINEON TECHNOL NORTH AMERICA CORP;INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
KIRIHATA TOSHIAKI;DANIEL GABRIEL |
分类号 |
G11C11/401;G11C29/00;G11C29/04;H01L21/82;H01L21/8242;H01L27/108 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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