发明名称 SEMICONDUCTOR MEMORY AND METHOD OF IMPROVING YIELD THEREOF
摘要 PROBLEM TO BE SOLVED: To increase yield of chips while preventing signal contention of a sense amplifier using a high replacement flexibility redundancy and method. SOLUTION: Redundancy elements are integrated in at least two memory arrays which don't share the sense amplifiers. A defective row/column line in a first array or block is replaced with a redundant row/column line from its own redundancy. A corresponding row/column line whether defective or not is replaced in a second array or block which does not share sense amplifiers with the first block. The corresponding row/column line is replaced to mimic the redundancy replacement of the first block.
申请公布号 JP2000222898(A) 申请公布日期 2000.08.11
申请号 JP19990365136 申请日期 1999.12.22
申请人 INFINEON TECHNOL NORTH AMERICA CORP;INTERNATL BUSINESS MACH CORP <IBM> 发明人 KIRIHATA TOSHIAKI;DANIEL GABRIEL
分类号 G11C11/401;G11C29/00;G11C29/04;H01L21/82;H01L21/8242;H01L27/108 主分类号 G11C11/401
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