发明名称 CHARGE TRANSFER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a charge transfer device in which transfer efficiency of a micro signal charge is improved by shortening the effective transfer distance of signal charge. SOLUTION: A charge transfer device comprises first and second potential regions 102, 103 formed on a P type semiconductor substrate 101, first and second conductive electrodes 107a, 107b, 108a, 108b formed on insulating film 106, and, first and second final conductive electrodes 207a, 208a. Channel width is decreased toward the output side in the potential region immediately below the final charge transfer electrodes 207a, 208a contiguous to the output electrode. The first potential region 102 and third and fourth deeper potential regions 203a, 203b are provided immediately below the final charge transfer electrodes 207a, 208a.
申请公布号 JP2000223696(A) 申请公布日期 2000.08.11
申请号 JP19990326332 申请日期 1999.11.17
申请人 NEC CORP 发明人 NAKASHIBA YASUTAKA
分类号 H01L21/339;H01L29/762;H04N5/335;H04N5/341;H04N5/369;H04N5/372;(IPC1-7):H01L29/762 主分类号 H01L21/339
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