| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which can restrain that light leaked from a substrate influences radiated light. SOLUTION: In this semiconductor laser element 101, a GaN buffer layer 2, an n-type layer 3, an active layer 4, a p-type layer 5, a p-side electrode 6 and an n-side electrode 7, are provided on a sapphire substrate 1. A light nontransmittible film 12 which comprises a light absorbing property is formed inside the n-type layer 3. Even when light is leaked toward the upper part from the sapphire substrate 1, the light is absorbed by the light nontransmittible film 12 so as not to reach the active layer 4, and a laser beam which is radiated from the active layer 4 is not influenced. |
