| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a bipolar semiconductor device which ensured good ohmic contact with Al interconnection, without changing the impurity density of the bipolar device, and to provide a bipolar semiconductor device. SOLUTION: As shown in figure (F), for forming a high resistance section from a polycrystalline silicon film 3, ions are implanted with parts other than the part where a high resistance section is to be formed masked with a resist. Then, as shown in figure (G), a part 7 near a base formation region is oxidized by annealing to form a p-type base 9. A heat treatment used for forming the base region 9 can be also used as heat treatment for activation of impurities to form a high resistance region from the polycrystalline silicon film 3. In other words, since the heat treatment for the polycrystalline silicon film 3 can be also used as heat treatment (annealing processing) for forming the base region the characteristics of basic elements can be easily matched.
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