| 摘要 |
PROBLEM TO BE SOLVED: To reduce the production cost and raise the selective oxidation process yield to attain a high reproducibility by providing an Al-contg. crystal layer near and at least above a double hetero-structure and oxidating a part of an Al-contg. layer. SOLUTION: After a surface photo resist is removed, an n-type buffer layer, a first n-type InGaAsP clad layer 17, an active layer 24 having a multi-quantum well structure, a second p-type InGaAsP clad layer 23, a p-type InAlAs Al-contg. layer 22, and a p-type InP cap layer 21 are grown. A crystal is laminated on the (100)-plane but substantially not grown on the (111)-plane B, the ridge side face. A double hetero multilayer film and an InAlAs layer on the ridge top are formed in the form interrupted from the ridge lower right and left parts. After growing the cap layer, a protective SiO2 film is deposited on the surface, and the InAlAs layer is selectively oxidated sideways, except the ridge top, in a vapor-contg. N2 atmosphere.
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