| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive memory element which can be manufactured in a less number of manufacturing steps and/or can have a less number of constituent elements. SOLUTION: This memory element includes a substrate 11, having a source region 12, a drain region 15, and a channel region 23 therebetween, a first conductive region 26 connected to the source region 12, a second conductive region 28 connected to the drain region 15, an ion layer 31 containing ions and connected to the substrate 11, and a means 35 for moving the ions in such a manner as to influence the conductive property of the channel region 23. When the memory element is in logical HIGH state, the ions are moved towards the cannel region 23 by the polarity of an electric field, so that the channel region 23 becomes conductive. When the element is in logically LOW state, the ions are moved in the direction away from the channel region 23 by the electric field polarity, so that the channel region 23 becomes non-conductive.
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