| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing system in which processing gas is prevented from leaking to the outside of the system during the operation. SOLUTION: Under a state where a chamber cover 3 is mounted on a gas supply mechanism 2 mounted on a mounting base 1 provided with a surface 1a for mounting a wafer W, processing gas is supplied to a processing space 10 formed between the mounting surface 1a and the facing surface 3a of the chamber cover 3. When the wafer W is processed by regulating temperature of a heater 3b, nitrogen gas is supplied from a nitrogen gas supply mechanism to a groove 21 and discharged from a groove 31 communicating with a discharge mechanism thus purging the space between the first contact surface of the gas supply mechanism 2 and the second contact surface 30 of the chamber cover 3. According to the arrangement, processing gas is prevented from leaking to the outside of the substrate processing system and adverse effect on the wafer W is eliminated.
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