| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating an MISFET having a metal gate electrode in which the number of steps can be prevented from increasing even when a local interconnection or a contact on source-drain diffused layer is formed. SOLUTION: After a dummy gate electrode is formed on the active element part of a silicon substrate 11, a TEOS film 22 is deposited on the entire surface and then the surface is planarized. Subsequently, the dummy gate electrode is removed and a part for forming a metal gate electrode 30 is opened. After a gate insulation film 25 is deposited, parts for forming a local interconnection 31 and a contact plug 32 are opened. The local interconnection 31 and the contact plug 32 are formed simultaneously with formation of the metal gate electrode 30 by filling the forming parts, respectively, with a laminate film of titanium/titanium nitride 28 and a tungsten film 29.
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