| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that, for example, can minimize harmful influence such as the read action failure of a DRAM cell caused by the noise of a substrate other than a DRAM macro such as a logic circuit. SOLUTION: In an ASIC chip 1 with a built-in DRAM including a large-scale logic circuit 7, or the like, an entire DRAM macro 2 including not only a cell array part 6 of the DRAM but also an internal power supply circuit 4 is formed in a well 5 such as a Deep N well, and power is supplied to the DRAM macro 2 from the internal power supply circuit 4. The voltage fluctuation of a substrate due to a substrate noise being generated from a logic circuit 7 is equally experienced by a DRAM cell 63, the internal power supply circuit 4, and a DRAM control part 3, thus minimizing such failure hold failure. |
