发明名称 SEPARATING DEVICE, SEPARATING METHOD AND MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To prevent serrate defects from being generated in the peripheral parts of separated substrates when a laminated substrate formed by laminating together first and second substrates of a structure, wherein a single-crystal Si layer is formed on a porous layer and an insulating layer is formed on the Si layer, is separated into the separated substrates in the porous layers. SOLUTION: While a laminated substrate 30 is rotated in the direction R centered around C, a fluid a jetted through a jet nozzle 112 to drive the fluid into porous layers in the substrate 30, whereby the substrate 30 is separated in two substrates in the porous layers. When the peripheral part of the substrate 30 is separated, the nozzle 112 is made to position within the range of B.
申请公布号 JP2000223383(A) 申请公布日期 2000.08.11
申请号 JP19990025482 申请日期 1999.02.02
申请人 CANON INC 发明人 OMI KAZUAKI;SAKAGUCHI KIYOBUMI;YANAGIDA KAZUTAKA;YONEHARA TAKAO;KURISU HIROKAZU
分类号 H01L27/12;H01L21/00;H01L21/02;H01L21/762;H01L21/763;(IPC1-7):H01L21/02 主分类号 H01L27/12
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