GATE ELECTRODE STRUCTURE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To prevent the abnormal oxidization of high melting point metal due to oxidization treatment in a gate electrode structure. SOLUTION: An insulating film is formed on a semiconductor substrate, and an impurity diffused polysilicon film 16, an impurity diffusion preventing film 18, a high melting point silicide film 20, and a nitride film 22 are successively formed on the insulating film, and the impurity diffused polysilicon film 16, the impurity diffusion preventing film 18, the high melting point metallic silicide film 20, and the nitride film 22 are formed into a gate electrode pattern by photolito and etching process. Then, first spacers 26a constituted of silicon system films are formed on the side faces of the gate electrode, and the first spacers are formed into oxide films 26b by oxidization treatment.