| 摘要 |
<p>A manufacturing method for a semiconductor device is provided with the steps of: semi-full dicing a semiconductor wafer so as to leave a dicing residual portion with a predetermined thickness between devices on the semiconductor wafer; forming a protective layer having a chemical etching resistant property on an element formation face of the semiconductor wafer; chemically etching the semiconductor wafer having the protective layer formed on the element formation face from the rear face side so as to polish the rear face of the semiconductor wafer, so as to remove the dicing residual portion to divide the semiconductor wafer into individual semiconductor chips, and so as to remove damaged areas in a cut face of the semiconductor wafer resulted from the semi-full dicing process. Thus, it becomes possible to reduce the number of processes, and also to carry out a polishing process and a dicing process safely without giving damages to the semiconductor wafer and without causing cracks and chips therein. <IMAGE></p> |
