| 摘要 |
There is provided a method of fabricating a semiconductor device, including the steps of (a) forming recesses at a surface of an underlying insulating film, (b) covering inner surfaces of the recesses and a surface of the underlying insulating film with a barrier film, (c) depositing a copper film over the barrier film to thereby fill the recesses with copper, and (d) applying chemical mechanical polishing (CMP) to the copper film through the use of inorganic slurry on the condition that a polishing load is equal to or smaller than 140 g/cm2 and a linear velocity at a center of a wafer is equal to or smaller than 0.1 m/s. Though a copper film tends to be peeled off after CMP has been applied thereto in a conventional method, the method ensures that a copper film is no longer peeled off even after CMP has been applied thereto.
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