EPITAXIAL SILICON WAFER, ITS PRODUCTION AND SUBSTRATE FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high quality epitaxial silicon wafer which contains no I region (interstitial-silicon-rich region where interstitial silicon atoms are predominant over vacancies) throughout its whole surface and is produced by forming a wafer from a silicon single crystal and then stacking an epitaxial layer on the silicon wafer and in which no projection-shaped surface deformation observable as projections or particles in the surface of the epitaxial layer exists, to produce a single crystal containing no I region within a sliced surface in the diameter direction of the single crystal, throughout the whole surface, in good yield, to improve productivity of the epitaxial wafer and to reduce the cost of the epitaxial wafer. SOLUTION: This production process for forming an epitaxial wafer which contains no projections having >=100 nm size and >=5 nm height in the surface of its epitaxial layer, and growing a silicon single crystal by a CZ(Czochralski) method, comprises: growing a silicon single crystal bar containing no I region; slicing a wafer from the grown single crystal bar; and stacking an epitaxial layer on the wafer containing no I region within the sliced surface throughout the whole surface.