| 摘要 |
A CMOS (Complementary Metal Oxide Semiconductor) digital level shift circuit converts a first source voltage which ranges from Vcc to the ground, into a second source voltage which ranges from Vdd to the ground. The circuit includes an inverter and a latch circuit. The latch circuit includes a latch unit and a voltage distributor having a plurality of PMOS and NMOS transistors. The plurality of MOS transistors are serially connected in the voltage distributor, whereby the second source voltage which is higher than the channel breakdown voltages of the respective MOS transistors, is externally output.
|
